4.1 Diode concept and bias
Diodes are two-terminal electronic devices made from semiconductor materials, such as silicon, or germanium, or from compound semiconductor materials, such as gallium-arsenide. Such materials have a conductivity lower than that of conductors, such as aluminum and copper, but larger than that of insulators such as glass and rubber. The conductivity of a semiconductor material can be increased substantially by a process of “doping” in which different types and amounts of impurity atoms are injected into the material to alter its number of free electric charges. An “n-type” material, characterized by an excess of electrons (negative charges) is created by adding an impurity such as phosphorus into the semiconductor material to increase its conductivity. A “p-type” material, characterized by a excess of “holes” (these can be thought of as empty sockets into which electrons can fit; they are positive charges), is created by adding a different type of doping impurity, such as boron to the semiconductor. The two doped materials have higher concentrations of free charges and therefore have higher conductivity than the intrinsic (non-doped) semiconductor material. For example, the conductivity of p-type silicon is five orders of magnitude higher than the conductivity of intrinsic silicon. refer back to chapter in resistance and conductivity
Semiconductor junction. A junction is created when n-type and p-type pieces of semiconductor material are brought together as illustrated in figure 4.5. Owing to the high concentration of holes (+) in the p-type region relative to the n-type region, some of the holes diffuse or travel across the junction into the n-type region. Likewise, some of the electrons diffuse across the junction from the n-type to the p-type region. Diffusing holes and electrons combine with each other near the junction, creating a depletion region characterized by an absence of free charges. The width of this junction can be influenced by applying an external voltage across the diode, and this regulates the amount of current that can flow through the device. Electrodes attached to the sides of the diode enable an external voltage to be applied. The electrode attached to the p-type region is called the anode, while the electrode attached to the n-type region is called the cathode.
When an external voltage is applied across the diode, with a sufficiently high potential on the anode relative to the cathode, the diode is forward biased, and current flows through the device. Absent such an applied voltage, the diode is reverse biased, and current does not flow.
Forward bias. When a potential difference (voltage) is applied across the diode, with higher potential on the anode relative to the cathode, free negative charges from the n-type region are drawn toward the anode, while free positive charges from the p-type region are drawn toward the cathode. This fills in the depletion region with free charges, as depicted in fig